Description
High current HEXFET with a low on resistance for efficient use in a small package.
Specification:
Category | Power MOSFET |
Channel Mode | Enhancement |
Configuration | Single |
Max Continuous Drain Current | |
Max Drain Source Resistance | 0.005Ω |
Max Drain Source Voltage | 100V |
Max Gate Source Voltage | ±20V |
Max Operating Temperature | +175°C |
Min Operating Temperature | -55°C |
Mounting | Through Hole |
No of Elements per Chip | 1 |
Typical Turn-Off Delay Time | 78nS |
Typical Turn-On Delay Time | 25nS |
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