Description
High current MOSFET with a low on resistance for efficient use in a small package.
Specification
Category | Power MOSFET |
Channel Mode | Enhancement |
Channel Type | N |
Configuration | Single |
Max Continuous Drain Current | 35A |
Max Drain Source Resistance | 0.045Ω |
Max Drain Source Voltage | 100V |
Max Gate Source Voltage | ±20V |
Max Operating Temperature | 175°C |
Min Operating Temperature | -55°C |
Mounting | Through Hole |
No of Elements per Chip | 1 |
Height(mm) | 9.15 |
Length(mm) | 10.4 |
Width(mm) | 4.6 |
Typical Fall Time | 10nS |
Typical Rise Time | 40nS |
Typical Turn-Off Delay Time | 45nS |
Typical Turn-On Delay Time | 15nS |
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